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| Ordering number : ENA1526 ATP213 SANYO Semiconductors DATA SHEET ATP213 Features * * * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Large current. Slim package. 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 50 150 50 150 --55 to +150 37 25 Unit V V A A W C C mJ A Note : *1 VDD=10V, L=100H, IAV=25A *2 L100H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=16V, VDS=0V Ratings min 60 1 10 typ max Unit V A A Marking : ATP213 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 80509PA TK IM TC-00002021 No. A1526-1/4 ATP213 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=1mA VDS=10V, ID=25A ID=25A, VGS=10V ID=13A, VGS=4.5V ID=7A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=50A VDS=30V, VGS=10V, ID=50A VDS=30V, VGS=10V, ID=50A IS=50A, VGS=0V Ratings min 1.2 55 12 15 17 3150 310 190 23 170 230 150 58 10.5 12.5 1.01 1.2 16 21 26 typ max 2.6 Unit V S m m m pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 4.6 2.6 0.4 4 7.3 1.7 2 0.5 1 0.8 2.3 2.3 3 9.5 0.55 0.7 0.6 4.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK Switching Time Test Circuit VIN VDD=30V 10V 0V 0.1 VIN PW=10s D.C.1% G D ID=25A RL=1.2 VOUT ATP213 P.G 50 S 6.05 No. A1526-2/4 ATP213 VDS=10V Single pulse 45 40 4. 0V 70 16.0 10.0V V 8.0V 4.5 V 3.5V 65 60 55 50 45 40 35 25 20 10 5 0 15 30 Drain Current, ID -- A 30 25 20 15 10 5 0 0 6.0 35 VGS=3.0V Drain Current, ID -- A V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 25 2.5 3.0 --25 C Tc= 75C C 3.5 Tc= --25 C 75 C 25 C 4.0 4.5 5.0 50 ID -- VDS Tc=25C Single pulse 75 ID -- VGS Drain-to-Source Voltage, VDS -- V 40 RDS(on) -- VGS IT14837 35 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc IT14838 Static Drain-to-Source On-State Resistance, RDS(on) -- m 35 30 25 20 15 10 5 1 2 3 4 Static Drain-to-Source On-State Resistance, RDS(on) -- m Tc=25C Single pulse ID=7A 13A 25A Single pulse 30 25 20 15 10 5 0 --50 =7A , ID 4.0V = A =13 VGS , ID .5V =4 25A I= VGS 0V, D . =10 VGS 5 6 7 8 9 10 11 12 13 14 15 16 IT14839 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 | yfs | -- ID C 25 --2 C 5 Case Temperature, Tc -- C 100 7 5 3 2 IS -- VSD IT14840 Forward Transfer Admittance, | yfs | -- S 7 5 3 2 10 7 5 3 2 1.0 VDS=10V Single pulse VGS=0V Single pulse Source Current, IS -- A 10 7 5 3 2 0.1 7 5 3 2 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 7 5 5 7 100 IT14841 0.01 7 5 3 2 0.001 0 0.2 0.4 Tc= 75 C 25C --25 C 0.6 0.8 = Tc C 75 1.0 7 5 3 2 1.0 1.2 1.4 IT14842 SW Time -- ID td(off) 7 5 3 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V VDD=30V VGS=10V f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 tf Ciss, Coss, Crss -- pF 2 1000 7 5 3 2 tr 3 2 Coss Crss td(on) 100 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT14843 7 0 10 20 30 40 50 60 IT14844 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1526-3/4 ATP213 10 9 VGS -- Qg VDS=30V ID=50A Drain Current, ID -- A 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=150A PW10s Gate-to-Source Voltage, VGS -- V 10 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 IT14845 ID=50A 10 ms 0m s 10 10 s 1m 0 s s Operation in this area is limited by RDS(on). DC op on ati er Tc=25C 2 3 5 7 10 2 3 5 7 100 IT14846 0.1 Single pulse 23 5 7 1.0 0.1 Total Gate Charge, Qg -- nC 60 PD -- Tc Drain-to-Source Voltage, VDS -- V 120 EAS -- Ta Allowable Power Dissipation, PD -- W Avalanche Energy derating factor -- % 50 100 40 80 30 60 20 40 10 20 0 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT10478 Case Temperature, Tc -- C IT14847 Ambient Temperature, Ta -- C Note on usage : Since the ATP213 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2009. Specifications and information herein are subject to change without notice. PS No. A1526-4/4 |
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